? semiconductor components industries, llc, 2006 august, 2006 ? rev. 2 1 publication order number: NTP22N06L/d NTP22N06L, ntb22n06l power mosfet 22 amps, 60 volts, logic level n ? channel to ? 220 and d 2 pak designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. typical applications ? power supplies ? converters ? power motor controls ? bridge circuits maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain ? to ? source voltage v dss 60 vdc drain ? to ? gate voltage (r gs = 10 m ) v dgr 60 vdc gate ? to ? source voltage ? continuous ? non ? repetitive (t p 10 ms) v gs v gs 10 20 vdc drain current ? continuous @ t a = 25 c ? continuous @ t a = 100 c ? single pulse (t p 10 s) i d i d i dm 22 10 66 adc apk total power dissipation @ t a = 25 c derate above 25 c p d 60 0.4 w w/ c operating and storage temperature range t j , t stg ? 55 to +175 c single pulse drain ? to ? source avalanche energy ? starting t j = 25 c (v dd = 50 vdc, v gs = 5.0 vdc, l = 1.0 mh i l(pk) = 12 a, v ds = 60 vdc, r g = 25 ) e as 72 mj thermal resistance ? junction ? to ? case ? junction ? to ? ambient r jc r ja 2.5 62.5 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c 22 amperes 60 volts r ds(on) = 65 m device package shipping ordering information NTP22N06L to ? 220ab 50 units/rail to ? 220ab case 221a style 5 1 2 3 4 http://onsemi.com n ? channel d s g marking diagrams & pin assignments ntx22n06l = device code x = p or b ll = location code y = year ww = work week ntx22n06l llyww 1 gate 3 source 4 drain 2 drain ntx22n06l llyww 1 gate 3 source 4 drain 2 drain 1 2 3 4 d 2 pak case 418b style 2 ntb22n06l d 2 pak 50 units/rail ntb22n06lt4 d 2 pak 800/tape & reel
NTP22N06L, ntb22n06l http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain ? to ? source breakdown voltage (note 1.) (v gs = 0 vdc, i d = 250 adc) temperature coefficient (positive) v (br)dss 60 ? 68.2 81 ? ? vdc mv/ c zero gate voltage drain current (v ds = 60 vdc, v gs = 0 vdc) (v ds = 60 vdc, v gs = 0 vdc, t j = 150 c) i dss ? ? ? ? 1.0 10 adc gate ? body leakage current (v gs = 15 vdc, v ds = 0 vdc) i gss ? ? 100 nadc on characteristics (note 1.) gate threshold voltage (note 1.) (v ds = v gs , i d = 250 adc) threshold temperature coefficient (negative) v gs(th) 1.0 ? 1.79 5.0 2.0 ? vdc mv/ c static drain ? to ? source on ? resistance (note 1.) (v gs = 5.0 vdc, i d = 11 adc) r ds(on) ? 57 65 m static drain ? to ? source on ? voltage (note 1.) (v gs = 5.0 vdc, i d = 22 adc) (v gs = 5.0 vdc, i d = 11 adc, t j = 150 c) v ds(on) ? ? 1.4 1.17 1.7 ? vdc forward transconductance (note 1.) (v ds = 7.0 vdc, i d = 11 adc) g fs ? 14.6 ? mhos dynamic characteristics input capacitance (v ds = 25 vdc, v gs = 0 vdc, f = 1.0 mhz) c iss ? 490 690 pf output capacitance c oss ? 167 230 transfer capacitance c rss ? 56 80 switching characteristics (note 2.) turn ? on delay time (v dd = 30 vdc, i d = 22 adc, v gs = 5.0 vdc, r g = 9.1 ) (note 1.) t d(on) ? 10 20 ns rise time t r ? 115 230 turn ? off delay time t d(off) ? 21 40 fall time t f ? 56 120 gate charge (v ds = 48 vdc, i d = 22 adc, v gs = 5.0 vdc) (note 1.) q t ? 10.4 20 nc q 1 ? 2.5 ? q 2 ? 7.0 ? source ? drain diode characteristics forward on ? voltage (i s = 22 adc, v gs = 0 vdc) (note 1.) (i s = 22 adc, v gs = 0 vdc, t j = 150 c) v sd ? ? 1.03 0.98 1.2 ? vdc reverse recovery time (i s = 22 adc, v gs = 0 vdc, di s /dt = 100 a/ s) (note 1.) t rr ? 42 ? ns t a ? 26 ? t b ? 16 ? reverse recovery stored charge q rr ? 0.060 ? c 1. pulse test: pulse width 300 s, duty cycle 2%. 2. switching characteristics are independent of operating junction temperatures.
NTP22N06L, ntb22n06l http://onsemi.com 3 0 0.16 0.12 40 30 20 0 10 50 t j = 25 c t j = ? 55 c t j = 100 c v gs = 10 v 0.08 0.04 50 30 20 10 0 v ds , drain ? to ? source voltage (volts) i d , drain current (amps) v gs , gate ? to ? source voltage (volts) i d , drain current (amps) i d , drain current (amps) i d , drain current (amps) r ds(on) , drain ? to ? source resistance ( ) r ds(on) , drain ? to ? source resistance ( ) t j , junction temperature ( c) v ds , drain ? to ? source voltage (volts) r ds(on) , drain ? to ? source resistance (normalized) i dss , leakage (na) 2 1.8 1.4 1.6 1.2 1 0.6 10 1000 10000 03 2 1 figure 1. on ? region characteristics figure 2. transfer characteristics 0 0.16 0.12 30 20 0 10 40 figure 3. on ? resistance versus gate ? to ? source voltage figure 4. on ? resistance versus drain current and gate voltage figure 5. on ? resistance variation with temperature figure 6. drain ? to ? source leakage current versus voltage 50 ? 50 50 25 0 ? 25 75 125 100 1.8 3.4 6.6 2.6 03040 20 10 50 60 40 30 20 10 0 6 175 150 0.8 4 5 4.2 6 v v ds 10 v t j = 25 c t j = ? 55 c t j = 100 c t j = 25 c t j = ? 55 c t j = 100 c v gs = 5 v v gs = 0 v t j = 150 c t j = 100 c i d = 11 a v gs = 5 v v gs = 10 v 5.5 v 5 v 8 v 5 5.8 0.08 0.04 100 4.5 v 4 v 3.5 v 3 v 40
NTP22N06L, ntb22n06l http://onsemi.com 4 gate ? to ? source or drain ? to ? source voltage (volts) c, capacitance (pf) q g , total gate charge (nc) v gs , gate ? to ? source voltage (volts) r g , gate resistance ( )v sd , source ? to ? drain voltage (volts) i s , source current (amps) t, time (ns) v ds , drain ? to ? source voltage (volts) t j , starting junction temperature ( c) i d , drain current (amps) e as , single pulse drain ? to ? source avalanche energy (mj) 100 10 1 0.1 1000 100 1 6 5 4 3 2 1 0 80 60 20 40 0 24 20 16 12 4 0 10 1600 10 1400 1200 15 5 020 1000 800 600 400 0 5 figure 7. capacitance variation figure 8. gate ? to ? source and drain ? to ? source voltage versus total charge figure 9. resistive switching time variation versus gate resistance figure 10. diode forward voltage versus current figure 11. maximum rated forward biased safe operating area figure 12. maximum avalanche energy versus starting junction temperature 25 0 10 8 4 1 10 100 0.6 0.76 0.68 0.92 1.08 0.1 10 100 1 25 125 150 100 75 175 50 200 0.84 10 12 1 i d = 22 a t j = 25 c v gs v gs = 0 v v ds = 0 v t j = 25 c c rss c iss c oss c rss c iss v gs = 15 v single pulse t c = 25 c v ds = 30 v i d = 22 a v gs = 5 v v gs = 0 v t j = 25 c i d = 12 a t f t d(off) t d(on) t r r ds(on) limit q t q 2 q 1 10 ms 1 ms 100 s dc v gs v ds thermal limit package limit 8 10 s 26
NTP22N06L, ntb22n06l http://onsemi.com 5 r(t). effective transient thermal resistance (normalized) t, time ( s) 0.1 1.0 0.01 0.1 0.2 0.02 d = 0.5 0.05 0.01 single pulse r jc (t) = r(t) r jc d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) r jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 1 10 0.1 0.01 0.001 0.0001 0.00001 figure 13. thermal response figure 14. diode reverse recovery waveform di/dt t rr t a t p i s 0.25 i s time i s t b
NTP22N06L, ntb22n06l http://onsemi.com 6 package dimensions to ? 220 three ? lead to ? 220ab case 221a ? 09 issue aa style 5: pin 1. gate 2. drain 3. source 4. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 ??? 1.15 ??? z ??? 0.080 ??? 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j d 2 pak case 418b ? 03 issue d style 2: pin 1. gate 2. drain 3. source 4. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. seating plane s g d ? t ? m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 ? b ? m b
NTP22N06L, ntb22n06l http://onsemi.com 7 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 NTP22N06L/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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